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| Formosa MS FM120-M-R THRU FM1100-M-R Chip Schottky Barrier Diodes Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.063(1.6) 0.055(1.4) SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) 0.126(3.2) 0.110(2.8) 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeters) Mechanical data Case : Molded plastic, JEDE SOD-123 / MI I SMA C N Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.04 gram o MAXIMUM RATINGS (AT T A=25 C unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C IR Rq JA CJ TSTG -55 98 120 +150 CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.1 2.0 o UNIT A A mA mA C/w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage C SYMBOLS MARKING CODE 12 13 14 15 16 18 10 V RRM 20 30 40 50 60 80 *1 V RMS 14 21 28 35 42 56 70 *2 VR *3 VF *4 Operating temperature (o C) (V) FM120-M-R FM130-M-R FM140-M-R FM150-M-R FM160-M-R FM180-M-R FM1100-M-R (V) (V) 20 30 40 50 60 80 100 (V) 0.50 -55 to +125 *1 Repetitive peak reverse voltage 0.70 -55 to +150 0.85 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 100 RATING AND CHARACTERISTIC CURVES (FM120-M-R THRU FM1100-M-R) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 1.2 1.0 50 INSTANTANEOUS FORWARD CURRENT,(A) 0M -R FM 12 0M -R 0.8 15 FM 12 FM 0.6 0.4 0.2 0 0 20 40 60 80 10 3.0 1.0 ~F M 14 ~F M 16 0M -R 0- 100 120 140 160 180 200 FM 15 0M -R AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 0R M4 M1 ~F 0- 0 11 FM R~ M0R M- R M- 18 FM 0 00 11 M ~F -R -M -R -M Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 24 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 12 6 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 350 300 250 200 150 100 50 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 Tj=75 C .1 Tj=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) |
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